Ferroelectric Ram Seminar report
A Ferroelectric memory cell consists of a ferroelectric capacitor and a MOS transistor. Its construction is similar to the storage cell of a DRAM. The difference is in the dielectric properties of the material between the capacitor's electrodes. This material has a high dielectric constant and can be polarized by an electric field. The polarisation remains until it gets reversed by an opposite electrical field. This makes the memory non-volatile. Data is read by applying an electric field to the capacitor. If this switches the cell into the opposite state (flipping over the electrical dipoles in the ferroelectric material) then more charge is moved than if the cell was not flipped. This can be detected and amplified by sense amplifiers. Reading destroys the contents of a cell which must therefore be written back after a read. This is similar to the precharge operation in DRAM, though it only needs to be done after a read rather than periodically as with DRAM refresh.
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