Ovonic Unified Memory Seminar report
Date: 14 Feb 2016
In this Seminar Report paper, we reviewed the Ovonic Unified Memory Seminar Report. OUM is the non volatile memory that utilizes a reversible structural phase change between amorphous and polycrystalline states in a GeSbTe chalcogenide alloy material. This transition is accomplished by heating a small volume of the material with a write current pulse and results in a considerable change in alloy resistivity. The amorphous phase has high resistance and is defined as the RESET state. The low resistance polycrystalline phase is defined as the SET state.
Unlike conventional flash memory Ovonic unified memory can be randomly addressed. Ovonic unified memory cells can be written 10 trillion times when compared with conventional flash memory devices. The computers using Ovonic unified memory would not be subjected to critical data loss when the system hangs up or when power is abruptly lost as are present day computers using DRAM a/o SRAM. Ovonic unified memory requires fewer steps in an IC manufacturing process resulting in reduced cycle times, fewer defects, and greater manufacturing flexibility. These properties essentially make OUM an ideal commercial memory. Current commercial technologies do not satisfy the density, radiation tolerance, or endurance requirements for space applications. Ovonic unified memory technology offers great potential for low power operation and radiation tolerance, which assures its compatibility in space applications. OUM has direct applications in all products presently using solid state memory, including computers, cell phones, graphics-3D rendering, GPS, video conferencing, multimedia, Internet networking and interfacing, digital TV, telecom, PDA, digital voice recorders, modems, DVD, ATM, Ethernet, and pagers. Ovonic unified memory offers a way to realize full system-on-achip capability through integrating unified memory, linear, logics on the same silicon chip.
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